The Preparation of Large-area Two-dimensional Materials and the Establishment of Their Hetero-structures for Device Applications
Shih-Yen Lin1*
1Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan
* Presenter:Shih-Yen Lin, email:shihyen@gate.sinica.edu.tw
Compared with traditional semiconductor materials, one of the major advantages of 2D materials is that their unique characteristics can be observed within several atomic layers, which makes them suitable for device applications with nm linewidths. Graphene, the most studied 2D material in the last decade, has been considered as a promising candidate for the application of the next-generation electronic devices. However, the zero bandgap nature of graphene has led to low on/off ratios for its transistors, which has limited the practical applications of graphene for electronic devices. Therefore, people have turned their attention to other 2D materials with visible bandgap values such as transition metal dichalcogenides (TMDs). With the device performances of individual 2D materials gradually coming to a limit, people have turned their attentions again to the study of 2D material hetero-structures. In this report, we will start from the preparation of individual 2D materials including graphene and different TMDs. With the materials at hand, large-area 2D material hetero-structures can be prepared by using van der Waals epitaxy. The improved device performances of 2D material hetero-structures have demonstrated that there is still a large room for the investigations of 2D materials.


Keywords: 2D materials, Hetero-structures