Controlling Electronic Band Structure and Correlations by Dimensional Confinement and Epitaxial Strain in Complex Oxide Thin Films
Kyle Shen1*
1Physics, Cornell University, Ithaca, NY, USA
* Presenter:Kyle Shen, email:kmshen@cornell.edu
Our ability to control the electronic structure of materials, for instance at semiconductor interfaces, has had enormous scientific and technological implications. Recently, this concept has been extended to materials which possess inherently strong quantum many-body interactions which can harbor novel electronic or magnetic properties. Here, we demonstrate the ability to control the band structure and effective strength of correlations through dimensional confinement or epitaxial strain in complex oxide thin films. I will describe work using a combination of reactive oxide molecular beam epitaxy (MBE) and angle-resolved photoemission (ARPES) to investigate how strain and dimensional confinement can be used to control the properties of complex oxide thin films. I will describe how we use epitaxial strain to drive a Lifshitz transition in thin films of the odd-parity superconductor Sr₂RuO₄. I will also describe how we use dimensional confinement to drive a metal-insulator transition in thin films of LaNiO₃ and achieve large mass enhancements in the atomically iridate IrO₂.


Keywords: Complex Oxide Thin Films, ARPES, MBE