Quantum Transport in Graphene-Based Devices
Chi-Te Liang1*
1Department of Physics, National Taiwan University, Taipei, Taiwan
* Presenter:Chi-Te Liang, email:ctliang@phys.ntu.edu.tw
In this talk, I shall present our recent experimental results on graphene-based devices. In particular, renormalization-group (RG) studies of monolayer graphene grown on SiC will be described [1, 2]. Both semi-circle [1] and cusp-like RG flow [2] can be observed in highly disordered monolayer graphene. I shall discuss our experimental results on the fractional quantum Hall effect in the N=2 Landau level in bilayer graphene [3]. Finally I am going to say something about the Shubnikov-de Haas oscillations in moderate disordered graphene which can be used to study the temperature dependence of the carrier density [4] as well as the crossover from "ordinary metal" to disordered graphene [5].

References
[1] L.-I. Huang et al., RSC Adv. 6, 71977 (2016).
[2] L.-I. Huang et al., RSC Adv. 7, 31333 (2017).
[3] G. Diankov et al., Nat. Commun. 7, 13908 (2016).
[4] C.-W. Liu et al., 2D Mater. 4, 025007 (2017).
[5] C. Chuang et al., Nanoscale 9, 11537 (2017).


Keywords: Graphene, Fractional quantum Hall effect, Electron-electron interactions, Shubnikov-de Haas oscillations