Chemical-Doping-Driven Crossover from Graphene to “Ordinary Metal” in Epitaxial Graphene Grown on SiC
Chiashain Chuang1,2*, Yanfei Yang2, S. Pookpanratana2, C. A. Hacker2, Ya-Ping Hsieh1, Chi-Te Liang3, Randolph E. Elmquist2
1Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
2National Institue of Standard and Technology, Gaithersburg, Maryland, USA
3Department of Physics, National Taiwan University, Tapiei, Taiwan
* Presenter:Chiashain Chuang,
I will present that the chemical atmospheric doping (derived from air, oxygen and water vapor) of low-carrier- density monolayer epitaxial graphene on SiC can be readily tuned by a simple low-temperature (T ≤ 450 K), in situ vacuum gentle heating method. Interestingly, such an approach allows, for the first time, the observation of a crossover from graphene (μt/μq ≈ 2) to an “ordinary metal” (μt/μq ≈ 1) with decreasing carrier density, where μt and μq are transport mobility and quantum mobility, respectively. In the low carrier density limit, our results are consistent with the theoretical prediction that μt is inversely pro- portional to charged impurity density. Our data also suggest that atmospheric chemical doping can be used to vary intervalley scattering in graphene which plays a crucial role in backward scattering events.

Keywords: epitaxial graphene, chemical doping, Shubnikov–de Haas oscillations, quantum Hall effect