Growth of Silicon and Germanium on Al(111): an Stm Study
Han-De Chen1*, Pin-Jui Hsu1, Deng-Sung Lin1
1Department of Physics, National Tsing Hua University, Hsinchu, Taiwan
* Presenter:Han-De Chen, email:k16482@hotmail.com
Two-dimensional materials composed of single element called Xene (X=C, Si, Ge, Sn, P) have been widely researched for its potential application in recent years. In this study, low temperature scanning tunneling microscopy (LT-STM) was utilized to acquire the atomic resolution images in the attempt to growth silicene and germanene on the Al(111) surface. The evaporation of Si on Al(111) leads to domains with (3×3) superstructure at around 0.5-ML coverage. Growth of Ge on Al(111) forms a new Germanene phase with (√7×√7) structure, which is different from the Germanene (3×3) on Al(111) reported in the literature. The growth mechanism for both cases are discussed.


Keywords: Silicene and Germanene, LT-STM