Domain Switching Kinetics and Relaxation of Transparent and Flexible Ferroelectric Heterostructures
Pao-Wen Shao1*, Chun-Hao Ma1, Meng-Fu Tsai1, Ying-Hao Chu1,2,3
1Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan
2Department of Electrophysics, National ChiaoTung University, Hsinchu, Taiwan
3Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan
* Presenter:Pao-Wen Shao
From the past decades, wearable electric components have been regarded as a promising scenario for novel technology development. Benefitted from flexible muscovite substrates, fabricating wearable electric components becomes reality. However, the fundamental performance of these novel materials under strain states needs further confirmation. In this approach, we investigated the time-dependent domain wall motion in transparent epitaxial (Pb0.9La0.1)(Zr0.7Ti0.3)O3 thin film by piezoresponse force microscopy(PFM). Based on applying voltage via probing tip, partial reversal of polarization generated, which give us insight into the mechanism of domain relaxation. Under the circumstance of bending at reducing radius, the increasing strain is accompanied on the model of ferroelectrics/ bottom electrode/ mica substrates. In comparison with traditional Pb(Zr0.7Ti0.3)O3 ferroelectric thin film, (Pb0.9La0.1)(Zr0.7Ti0.3)O3 thin film not only exhibits brilliant transparency, but it also reveals comparable retention behavior. Furthermore, this work quantitatively identifies the mechanism that controls the propagation of the domain under bending status.


Keywords: PLZT, optical transparency, flexible mica substrate, piezoresponse force microscopy(PFM), retention