Coo Thin Film on Muscovite Substrate for Flexible Memorial Device Application
Thai Duy Ha1*, Chun-Fu Chang3, Liu Hao Tjeng3, Jenh-Yih Juang1, Ying-Hao Chu2
1Electrophysics, National Chiao Tung University, HSINCHU, Taiwan
2Material Science and Engineering, National Chiao Tung University, HSINCHU, Taiwan
3Chemical Physics of Solids, Max-Planck Insitute, Dresden, Germany
* Presenter:Thai Duy Ha
Cobalt (II) oxide, CoO, is one of the most technically significant antiferromagnetic materials in information-storage technology due to its high Neel temperature (290 K), high magnetocrystalline anisotropy, and its high chemical and structural compatibility with ferromagnetic films. Following the trend of flexible and wearable technology nowadays, pliable storage devices are highly demanded. In this talk, we will present our recent research on the growth of flexible CoO/muscovite (MICA) heteroepitaxy by oxide molecular beam epitaxy (MBE). In situ and real-time monitoring of epitaxial growth was performed by high energy electron diffraction (RHEED) measurements. The heteroepitaxy of CoO/MICA was characterized by x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Structural characterizations indicated that, depend on growth conditions, CoO thin films could be grown in MICA substrates epitaxially in either (111) or (001) directions. To study the applying potential of CoO thin film on mica, samples of Au/Co/CoO/MICA with both growth orientations of CoO were fabricated and measured M-H loops at varied temperatures after cooling in 1 Tesla magnetic field by SQUID.


Keywords: Cobalt oxide, Mica, Flexible device, Exchange bias