Interface Engineering in Few-Layered InSe and Its Heterostructures
Yi-Ying Lu1*, Yu-Ting Peng1, Liang-Wei Lan1, Bheim Llona1, Jun-An Chen1, Chein-Cheng Kuo1
1Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan
* Presenter:Yi-Ying Lu, email:yiyinglu@g-mail.nsysu.edu.tw
Layered materials processing dangling bond-free surface have provided multiple degrees of freedom for assembling the van der Waals heterostructures (vdWHs) with atomic-scale control over the electronic states without the restriction of lattice matching. Indium selenide (InSe), belonging to group III monochalcogenides, has great potential for use in next generation ultrathin and flexible optoelectronic devices owing to its lighter effective electron mass (m* = 0.143 m0) in the conduction band, high room-temperature carrier mobility resulted from weak electron-phonon scattering, and high density of states due to the unusual energy-momentum relation of “Mexican Hat” at the top of the valence band. In this talk, some of our recent works in study of (i) persistent electrical-gating effect resulted from interface engineering in few-layered InSe, (ii) potential mapping of InSe field-effect transistor by operando scanning photoelectron microscopy, and (iii) charge transfer behavior at interface of InSe/GaSe heterojunction with different stacking order, will be highlighted.


Keywords: Interface engineering, Indium selenide, van der Waals heterostructure, operando scanning photoelectron microscopy