Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon
Che-Yu Lin1*, Xiaodan Zhu2, Shin-Hung Tsai2, Shiao-Po Tsai2, Sidong Lei2, Yumeng Shi3, Lain-Jong Li4, Shyh-Jer Huang5, Wen-Fa Wu6, Wen-Kuan Yeh6, Yan-Kuin Su1,7, Kang L. Wang2, Yann-Wen Lan8
1Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan
2Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California, USA
3SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen University, Shenzhen, China
4Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia
5Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan
6National Nano Device Laboratories, National Applied Research Laboratories, Hsinchu, Taiwan
7Department of Electrical Engineering, Kun Shan University, Tainan, Taiwan
8Department of Physics, National Taiwan Normal University, Taipei, Taiwan
* Presenter:Che-Yu Lin
High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2−MoS2 junctions as the conducting p−n channel is demonstrated. Both lateral n−p−n and p−n−p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained inour prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density, and flexible electronics.


Keywords: 2D materials, heterojunction bipolar transistors, resonant tunneling phenomenon, lateral junction, atomic layered