Direct Deposition of High Quality Crystalline TiO2 Thin Films Using an Atmospheric Pressure Plasma Jet Equipped with an Ultrasonic Neubilizer
Hung-Yi (Steve) Yang1*, Jih-Shang Hwang1
1Nanofabrication and Thin Film Processing Lab/Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung, Taiwan
* Presenter:Hung-Yi (Steve) Yang
With the help of homemade atmospheric pressure plasma jet (APPJ) equipped an ultrasonic atomizer or nebulizer, we have successfully synthesized silicon dioxide (SiO2) and titanium dioxide (TiO2) nanomaterials as well as thin films. SEM, X-ray diffraction, Raman spectrum, and absorption were carried out to investigate the grown film of TiO2. We found that, when grown on substrates at room temperatures, TiO2 tends to form nanoparticles, but grown with increased substrate temperatures, it forms thin films with increased quality. In our experiments, we have discovered that the Anatase phase of TiO2 film could be synthesized in the temperature between 350 and 450 °C with the substrate of quartz. Various oxide semiconductors like ZnO were also carried out. It turns out APPJ is quite a useful and simple technique in the future.


Keywords: APPJ, plasma jet printing, , Dielectric Barrier Discharge (DBD), Aerosol deposition, Ultrasonic atomizer, TiO2