Controllable Synthesis of Highly-Crystalline MoS2 by Organic Liquid Precursor
Li-Syuan Lu (呂秝萱)1*, Zen Yu Juang (莊鎮宇)1, Wen-Hao Chang (張文豪)1
1Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan
* Presenter:Li-Syuan Lu (呂秝萱)
Atomically-thin layer materials, such as transition metal dichalcogenides MX2 (M=Mo, W; X=S, Se), have been attracted considerable interests in wide range of applications due to its unique physical and electrical properties. Chemical vapor deposition (CVD) has been demonstrated as a low-cost and high-throughput method to obtain large-area MoS2 films. It has been reported that molybdenum oxide (MoO3 ) and sulfur (S) powders are suitable solid precursors [1] for CVD growth of MoS2 , where the vapor phase ratio of MoO3 and S is controlled by the growth temperature and pressure [2]. In practice, however, there are even more parameter that would affect the Mo: S ratio, making the growth hard to controllable and hence unreliable. In this work, we report a new scheme to synthesize MoS2 using liquid precursors for controlling the Mo: S ratio through the flow rates of carrier gases. The resulting grain size of single crystalline MoS2 flakes is comparable with that obtained from solid precursors. Photoluminescence and Raman measurements also reveal good crystalline quality for the MoS2 . CVD growth using liquid precursors provide a controllable and reliable way to produce highly crystalline MoS2 .


Keywords: MoS2, 2D material, Chemical vapor deposition