Prediction of Quantum Anomalous Hall Insulator in Transition Metal-Doped GaBi Honeycombs
Jing-Rong Su1, Christian P. Crisostomo1*, Zhi-Quan Huang1, Chia-Hsiu Hsu1, Hsin Lin2, Feng-Chuan Chuang1,3
1Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
2Institute of Physics, Academia Sinica, Taipei, Taiwan
3Multidisciplinary and Data Science Research Center, National Sun Yat-Sen University, Kaohsiung, Taiwan
* Presenter:Christian P. Crisostomo
Using first-principles electronic calculations, we predict quantum anomalous Hall (QAH) phases in GaBi honeycomb doped with transition metal (TM) under tensile strain. QAH phases were determined by calculating the Chern number (C). Our results show that such system can host quantum anomalous Hall (QAH) states. Phase transitions were observed in the evolution of band structures due to strain. Furthermore, we found an edge band crossing the Fermi level within the band gap in TM-doped GaBi nanoribbon with zigzag edge. Similar result is found in TM-doped hydrogenated GaBi. These suggest that TM-doped GaBi honeycomb grown in a suitable substrate could be used in potential spintronic device applications.


Keywords: Quantum anomalous Hall effect, Topological phase transition, GaBi honeycomb, Electronic structures, First-principles calculations